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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF9045MR1/D
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. * Typical Performance at 945 MHz, 28 Volts Output Power -- 45 Watts PEP Power Gain -- 19 dB Efficiency -- 41% (Two Tones) IMD -- -31 dBc * Integrated ESD Protection * Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. * TO-272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. * TO-270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
N-Channel Enhancement-Mode Lateral MOSFETs
MRF9045MR1 MRF9045MBR1
945 MHz, 45 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 1265-08, STYLE 1 TO-270 PLASTIC MRF9045MR1
CASE 1337-03, STYLE 1 TO-272 DUAL LEAD PLASTIC MRF9045MBR1
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 65 +15, -0.5 177 1.18 -65 to +150 175 Unit Vdc Vdc Watts W/C C C
THERMAL CHARACTERISTICS
Max 0.85 Unit C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M2 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22-A113 Rating 3
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6
MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA
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MRF9045MR1 MRF9045MBR1 1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 3 -- -- 2.8 3.7 0.22 4 4 5 0.4 -- Vdc Vdc Vdc S
Freescale Semiconductor, Inc...
Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss -- -- -- 70 38 1.7 -- -- -- pF pF pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps 17 19 -- dB
38
41
--
%
IMD
--
-31
-28
dBc
IRL
--
-14
-9
dB
Gps
--
19
--
dB
--
41
--
%
IMD
--
-31
--
dBc
IRL
--
-13
--
dB
MRF9045MR1 MRF9045MBR1 2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
VGG B1 + C6 C7 L1 RF INPUT Z1 C5 C1 Z2 Z3 Z4 Z5 Z6 Z7 DUT Z8 C9 Z9 C8 Z10 C10 Z11 C11 Z12 C13 C12 C14 B2 + C15 + C16 + C17 VDD
L2
RF OUTPUT Z13
C2
C3
C4
Freescale Semiconductor, Inc...
B1, B2 C1, C7, C13, C14 C2, C8 C3 C4, C5, C8, C9 C6, C15, C16 C10 C11 C12 C17 L1, L2 Z1 Z2
Short Ferrite Beads, Surface Mount 47 pF Chip Capacitors, B Case 2.7 pF Chip Capacitors, B Case 3.9 pF Chip Capacitor, B Case 10 pF Chip Capacitors, B Case 10 F, 35 V Tantalum Surface Mount Capacitors 2.2 pF Chip Capacitor, B Case 4.7 pF Chip Capacitor, B Case 1.2 pF Chip Capacitor, B Case 220 F, 50 V Electrolytic Capacitor 12.5 nH Inductors 0.20 x 0.08 Microstrip 0.57 x 0.12 Microstrip
Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13
0.14 x 0.32 Microstrip 0.47 x 0.32 Microstrip 0.16 x 0.32 x 0.62 Taper 0.18 x 0.62 Microstrip 0.56 x 0.62 Microstrip 0.33 x 0.32 Microstrip 0.14 x 0.32 Microstrip 0.36 x 0.08 Microstrip 1.01 x 0.08 Microstrip 0.15 x 0.08 Microstrip 0.29 x 0.08 Microstrip
Figure 1. MRF9045MR1 930-960 MHz Broadband Test Circuit Schematic
C6 Vbias C17 B1 C7 L1 C2 C3 C5 B2 C14 L2 C15 C16 A2 C10 C11 C12 C13 Vsupply
A1
C1
C4
CUT OUT AREA
C9 C8
WB1
WB2
Ground
MRF9045MR1
Ground
Figure 2. MRF9045MR1 930-960 MHz Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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MRF9045MR1 MRF9045MBR1 3
Freescale Semiconductor, Inc.
VGG B1 + C7 C8 C14 L2 RF OUTPUT Z13 B2 + C15 + C16 + C17 VDD
L1
RF INPUT Z1
C5 C1 Z2 Z3 Z4 Z5 Z6 Z7 DUT Z8
C9 Z9 Z10 Z11 Z12 C13
C2
C3
C4
C6
C10
C11
C12
Freescale Semiconductor, Inc...
B1 B2 C1, C8, C13, C14 C2 C3 C4 C5, C6, C9, C10 C7, C15, C16 C11 C12 C17 L1, L2 WB1, WB2
Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors, B Case 0.4-2.5 pF Variable Capacitor, Johanson Gigatrim 3.6 pF Chip Capacitor, B Case 0.8-8.0 pF Variable Capacitor, Johanson Gigatrim 10 pF Chip Capacitors, B Case 10 F, 35 V Tantalum Chip Capacitors 7.5 pF Chip Capacitor, B Case 0.6-4.5 pF Variable Capacitor, Johanson Gigatrim 220 F Electrolytic Chip Capacitor 12.5 nH Surface Mount Inductors 10 mil Brass Wear Blocks
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Board
0.260 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.500 x 0.100 Microstrip 0.215 x 0.270 Microstrip 0.315 x 0.270 Microstrip 0.160 x 0.270 x 0.520 Taper 0.285 x 0.520 Microstrip 0.140 x 0.270 Microstrip 0.450 x 0.270 Microstrip 0.250 x 0.060 Microstrip 0.720 x 0.060 Microstrip 0.490 x 0.060 Microstrip 0.290 x 0.060 Microstrip Taconic RF-35-0300, r = 3.5
Figure 3. MRF9045MBR1 930-960 MHz Broadband Test Circuit Schematic
C17 C7 B1 C8 C5 WB1 WB2 C4 C6 C14 L2 C13 C11 C12 OUTPUT VDD C15 C16
VGG
B2
INPUT
C1 C2
L1 C3
C9 C10
CUT OUT AREA
MRF9045MB 900 MHz Rev-02
Figure 4. MRF9045MBR1 930-960 MHz Broadband Test Circuit Component Layout
MRF9045MR1 MRF9045MBR1 4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
h , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) -10 -12 -14 -16 -18 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 12 930 935 940 945 950 955 VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 350 mA Two-Tone Measurement 100 kHz Tone Spacing IMD IRL Gps 50 45 40 35 IRL, INPUT RETURN LOSS (dB) 525 mA 10 -30 -32 -34 -36 -38 960
Freescale Semiconductor, Inc...
f, Frequency (MHz)
Figure 5. Class AB Broadband Circuit Performance
IMD, INTERMODULATION DISTORTION (dBc) 21 20.5 G ps , POWER GAIN (dB) 20 IDQ = 525 mA 420 mA 350 mA -15 -20 -25 -30 -35 -40 -45 VDD = 28 Vdc -50 f1 = 945 MHz, f2 = 945.1 MHz -55 0.1 IDQ = 280 mA 350 mA
19.5 19
18.5 18
280 mA VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz 1 10 100
17.5 17 0.1
420 mA 1 100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain versus Output Power
Figure 7. Intermodulation Distortion versus Output Power
22 60 Gps 50 40 30 20 0.1 1 10 VDD = 28 Vdc IDQ = 350 mA f = 945 MHz 10 0 100 , DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 -60 -70 -80 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 7th Order VDD = 28 Vdc IDQ = 350 mA f1 = 945 MHz f2 = 945.1 MHz 3rd Order 5th Order
20 G ps , POWER GAIN (dB) 18 16 14 12 10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Intermodulation Distortion Products versus Output Power
Figure 9. Power Gain and Efficiency versus Output Power
MOTOROLA RF DEVICE DATA
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MRF9045MR1 MRF9045MBR1 5
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 22 Pin = 1 W G ps , POWER GAIN (dB) 20 18 16 14 12 10 IMD 1 10 Gps VDD = 28 Vdc IDQ = 350 mA f1 = 945 MHz f2 = 945.1 MHz 60 40 20 0 -20 -40 -60 100
P out , OUTPUT POWER (WATTS) PEP
Pin = 0.6 W
Pin = 0.3 W
IDQ = 350 mA f = 945 MHz Two-Tone Measurement 100 kHz Tone Spacing 28 30 32
22
24
26
Freescale Semiconductor, Inc...
VDD, DRAIN VOLTAGE (VOLTS)
Pout, OUTPUT POWER (WATTS) PEP
Figure 10. Output Voltage versus Supply Voltage (MRF9045MR1)
Figure 11. Power Gain, Efficiency and IMD versus Output Power (MRF9045MBR1)
MRF9045MR1 MRF9045MBR1 6
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
Zo = 5
Freescale Semiconductor, Inc...
Zsource f = 945 MHz
Zload f = 945 MHz
f = 930 MHz f = 930 MHz
VDD = 28 V, IDQ = 350 mA, Pout = 45 W (PEP) f MHz 930 945 Zsource 0.81 - j0.25 0.85 - j0.05 Zload 2.03 + j0.09 2.03 + j0.28
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 12. Series Equivalent Input and Output Impedance (MRF9045MR1)
MOTOROLA RF DEVICE DATA
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MRF9045MR1 MRF9045MBR1 7
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
Zo = 5
Zload f = 960 MHz f = 930 MHz
f = 960 MHz
Zsource
f = 930 MHz
VDD = 28 V, IDQ = 350 mA, Pout = 45 W (PEP) f MHz 930 945 960 Zsource 0.75 - j0.6 0.72 - j0.6 0.70 - j0.5 Zload 2.65 - j0.05 2.60 - j0.05 2.55 - j0.02
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 13. Series Equivalent Input and Output Impedance (MRF9045MBR1)
MRF9045MR1 MRF9045MBR1 8
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc...
MOTOROLA RF DEVICE DATA
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MRF9045MR1 MRF9045MBR1 9
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
B E1 E4 aaa D aaa
M M 2X
D3
2X
PIN ONE ID
DA
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D1" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER MINED AT DATUM PLANE -H-. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. DIMENSIONS "D" AND "E2" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .003 PER SIDE. DIMENSIONS "D" AND "E2" DO INCLUDE MOLD MISMATCH AND ARE DETER MINED AT DATUM PLANE -D-. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 aaa INCHES MIN MAX .078 .082 .039 .043 .040 .042 .416 .424 .378 .382 .290 .320 .016 .024 .436 .444 .238 .242 .066 .074 .150 .180 .058 .066 .231 .235 .025 BSC .193 .199 .007 .011 .004 MILLIMETERS MIN MAX 1.98 2.08 0.99 1.09 1.02 1.07 10.57 10.77 9.60 9.70 7.37 8.13 0.41 0.61 11.07 11.28 6.04 6.15 1.68 1.88 3.81 4.57 1.47 1.68 5.87 5.97 0.64 BSC 4.90 5.06 0.18 0.28 0.10
DA
2X
b1
D1
E
Freescale Semiconductor, Inc...
A
PIN 2
D2
PIN 3
BOTTOM VIEW F
c1 H A1 A2
DATUM PLANE
NOTE 7
MRF9045MR1 MRF9045MBR1 10
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CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC
ZONE J
E5 E3
EXPOSED HEATSINK AREA PIN 1
A E2 E5
2X
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
D
CASE 1265-08 ISSUE G TO-270 PLASTIC MRF9045MR1
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
B 2X r1 aaa M C A B E1 A
DRAIN ID
GATE LEAD
DRAIN LEAD
D1
2X
b1 aaa
M
CA
D
2
Freescale Semiconductor, Inc...
E
c1
H
DATUM PLANE
F ZONE "J"
A
A1 A2 7 Y E2 Y
SEATING PLANE
C
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .438 .442 .248 .252 .241 .245 .025 BSC .199 .193 .007 .011 .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 11.12 11.23 6.30 6.40 6.12 6.22 0.64 BSC 4.90 5.05 .18 .28 1.60 1.73 .10
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 1337-03 ISSUE B TO-272 DUAL LEAD PLASTIC MRF9045MBR1
MOTOROLA RF DEVICE DATA
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EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE
E2 VIEW Y-Y
PIN 3
1
NOTE 8
MRF9045MR1 MRF9045MBR1 11
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
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MRF9045MR1 MRF9045MBR1 12
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MOTOROLA RF DEVICE DATA
MRF9045MR1/D

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